Silicon carbide market is anticipated to grow at a CAGR of 17% during 2019-2024


Posted March 11, 2022 by Lucintel

The global silicon carbide market is projected to grow at a CAGR of 17% during 2019-2024.

 
The global silicon carbide market is projected to grow at a CAGR of 17% during 2019-2024. The growth of silicon carbide market is driven by increasing demand for motor drives, growing application of SiC devices in RF and cellular base station, and increasing use of SiC in semiconductor to perform at high temperature and high voltage environment.
Some of the Key Questions answered in this exclusive report are:
Q.1 What are some of the most promising, high-growth opportunities for the silicon carbide market by SiC based device (SiC discrete devices, SiC MOSFET, SiC diode, SiC module, and SiC bare die), wafer size ( 2 Inch, 4 Inch, 6-Inch and above), application (RF device and cellular base station, power grid device, flexible AC transmission systems (FACTS), high-voltage, direct current (HVDC), power supply and inverter, lighting control, industrial motor drive, flame detector, EV motor drive, EV charging, electronic combat system, wind energy, and solar energy), end use industry (telecommunications, energy & power, automotive, renewable power generation, defense, and power electronics), and region (North America, Europe, APAC, and ROW)?
Q.2 Which segments will grow at a faster pace and why?
Q.3 What are the business risks and threats to the silicon carbide market?
Q.4 What are some changing demands of customers in the silicon carbide market?
Q.5 What are the new developments in the silicon carbide market? Which companies are leading these developments?
Q.6 What strategic initiatives are being implemented by key players for business growth?
Q.7 What are some of the competitive products and processes in this silicon carbide area and how big of a threat do they pose for loss of market share via product substitution?
Q.8 What M&A activity has occurred in the last 5 years in this silicon carbide market?
Download Brochure of this report by clicking on https://www.lucintel.com/silicon-carbide-market.aspx
Market Segmentation:
Based on SiC based device, the silicon carbide market is segmented into SiC discrete devices, SiC MOSFET, SiC diode, SiC module, and SiC bare die. The SiC discrete devices segment accounted for the largest share of the market in 2020.
North America is expected to be the largest region over the forecast period.
Key Players in the silicon carbide market are Technologies, Cree (Wolfspeed), RoHM Semiconductor, STmicroelectronics, ON Semiconductor, Toshiba, General Electric, Saint-Gobain Silicon Carbide, Fuji Electric, Ltd., Renesas Electronics, and others.
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The report helps stakeholders understand the pulse of the market and provides them with information on key drivers, restraints, challenges, and opportunities for market growth. It would also help to understand the competitors better and gain more insights to improve their position in the business.
To read more about this market please click on https://www.lucintel.com/silicon-carbide-market.aspx
About Lucintel
Lucintel, the premier global management consulting and market research firm, creates winning strategies for growth. It offers market assessments, competitive analysis, opportunity analysis, growth consulting, M&A, and due diligence services to executives and key decision-makers in a variety of industries. For further information, visit www.lucintel.com.
Brandon Fitzgerald
Lucintel
Dallas, Texas, USA
Email: [email protected]
Tel. 972.636.5056
Cell: 303.775.0751
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Tags silicon carbide market
Last Updated March 11, 2022