Key factors expected to drive the growth of market include increasing use in consumer electronics and automotive verticals, wide bandgap property of GaN material encouraging innovation, and increasing adoption of GaN radio frequency power device in military, defense and aerospace vertical. However, competition from silicon carbide (SiC) in high-voltage semiconductor applications is restraining GaN Power Device Market growth.

RF power devices held the largest market share in 2016

By Device type, GaN Power Device Market is segmented into Power and RF power devices. From this segment, market for RF power devices accounted for largest market share in 2016. Growth of this segment can be attributed to rising demand for high power in the very high frequency (VHF), ultrahigh frequency (UHF), and microwave bands.

GaN-based power drives segment to witness higher growth rates between 2017 and 2026

On the basis of application, GaN Power Device Market is segmented into Power Drivers, Supply & Inverter, and Radio Frequency. From this segment, market for power drivers is anticipated to grow at higher rate owing to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization

APAC to hold largest share of the GaN power device market during the forecast period

Geographically market is segmented into North America, Europe, Asia Pacific, Middle East & Africa, and Latin America. Among all geographical regions APAC is anticipated to account for the largest share of the overall GaN Power Device Market during the forecast period.